| PART |
Description |
Maker |
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| FX101L |
multi-purpose frequency sensitive switch
|
CML Microcircuits
|
| SST39SF020-70-4C-UH SST39SF020-90-4C-N SST39SF020- |
2 Megabit (256K x 8) Multi-Purpose Flash
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
Silicon Storage Technology Inc
FLASH
|
| SST39VF1681-70-4C-EKE SST39VF1681-70-4C-EKE-T SST3 |
64 Mbit (x16) Multi-Purpose Flash Plus
(SST39VF1681 / SST39VF1682) 16 Mbit (x8) Multi-Purpose Flash Plus
2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
Microchip Technology Inc.
SILICON STORAGE TECHNOLOGY INC
|
| GMCR100-6 |
SENSIT IVE GAT E SILICON CONTROLLED RECT IFIERS REVERSE BLOCKING THYRISTORS 0. 8A, 400V
|
E-Tech Electronics LTD
|
| SST32HF162-70-4C-TBK SST32HF162-90-4C-TBK SST32HF1 |
Multi-Purpose Flash (MPF) SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA48
Multi-Purpose Flash (MPF) SRAM ComboMemory 多功能闪光（强积金）的SRAM ComboMemory
Multi-Purpose Flash (MPF) SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO48
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| CI201210-6N8J CI201210-5N6D CI201210-4N7D CI201210 |
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0047 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.18 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| CI100505-5N6D CI100505-R10J CI100505-8N2J CI100505 |
Multi-Layer Chip Inductors 1 ELEMENT, 0.0015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| STW81103 |
Multi-band RF frequency synthesizer
|
STMicroelectronics
|
| 2SC2713 E000756 |
From old datasheet system
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
|
